蓝宝石晶片（三氧化二铝ai2o3）具有优异的光学性能、机械性能和化学稳定性，强度高、硬度大、耐冲刷，可在接近2000℃高温的条件下工作，被广泛应用于半导体发光二极管(led)、大规模集成电路等领域。
蓝宝石晶片作为衬底材料，有以下优点底优点：
生产技术成熟、器件质量较好
稳定性很好，能够运用在高温生长过程中
机械强度高，易于处理和清洗。
sapphire is a material of a uniquecombinationof physical, chemical and optical properties, which makeitresistant to high temperature, thermal shock, water andsanderosion, and scratching. it is a superior window material formanyir applications from 3µmto 5µm.c-plane sapphiresubstrates are widely used to grow iii-v and ii-vicompounds suchas gan for blue led and laser diodes, while r-planesapphiresubstrates are used for the hetero-epitaxial deposition ofsiliconfor microelectronic ic applications.
sapphire wafer application:
growth substrate for iii-v andii-vicompounds  
electronics and optoelectronics
ir applications
silicon on sapphire integratedcircuit(sos)
radio frequency integrated circuit(rfic)
蓝宝石晶片规格
regular specification of sapphire wafer
crystal material: min99.995%,highpurity,  monocrystalline al2o3
diameter:50.8mm+/-0.1mm;76.2mm+/-0.25mm;100.0mm+/-0.2mm; 150.0+/-0.5mm
thickness: 430+/-25um;650+/-25um;650+/-25um;1300+/-25um
orientation: c-axis(0001) tom(1-100) 0.2°±0.1°and  c-axis(0001) to a(11-20)0°±0.1°
single side polish:
ttv max 3um; max5um; max5um; max 15um
double side polish：
ttv max3um; max2.5um; max2.5um; max3um

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