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氮化铝晶片

2019/4/29 12:39:41发布78次查看
  • 加工定制:
  • 种类:化合物半导体
  • 特性:优良的导热性,较低的介电常数和介质损耗,可靠的绝缘性能,优良的力学性能
  • 用途:通讯器件、高亮度LED、电力电子器件

氮化铝具有优良的导热性(为氧化铝陶瓷的5-10倍),较低的介电常数和介质损耗,可靠的绝缘性能,优良的力学性能,无毒,耐高温,耐化学腐蚀,且与硅的热膨胀系数相近,广泛应用于通讯器件、高亮度led、电力电子器件等行业。我司可按客户要求生产各种规格尺寸形状的产品,另外提供氮化铝陶瓷片的抛光、激光划线加工:
1.表面抛光加工,光洁度经过抛光处理后,ra max 0.025um.
2.产品各向尺寸精度通过激光划线保证,最小值为+/-0.10mm.
the aluminum nitride (aln) ceramic hashighthermal conductivity(5-10 times as the alumina ceramic),lowdielectric constant and dissipation factor, good insulationandexcellent mechanical properties, non-toxic, highthermalresistance, chemical resistance ,and the linearexpansioncoefficient is similar with si,which is widely usedincommunication components, high power led, power electronicdevicesand other fields. special spec products can be produceduponrequests.
polished ceramic substrate: ouraln substrate can be polished(single and double polish) by theadvancedmachine which imported from abroad. ceramic substratesurfaceroughness can reach to less than 0.025um without porousafter beingpolished. it is perfectly suitable for the deviceapplication ofsmall spec, high precision , wiring density and goodstability.
laser processing service: through lasermachinescribing, cutting, and drilling, we can process aln substrate with high accuracy and absolute consistencyuponcustomer’s request.
氮化铝晶片常规规格
regular specification ofainwafer                                                              
square pieces
thickness:0.385mm/0.5mm/0.635mm/1mm                           
length/wide:50.8mm/76.2mm/101.6mm/114.3mm                         
round pieces
thickness: 1mm, 1.2mm, 1.5mm,2mm,2.5mm              
diameter: 16/19mm, 20/26mm, 30/35mm,40/45mm,50/52mm, 60mm, 75mm, 80mm

江阴皓睿光电新材料有限公司
田睿
13771298081
果园路12号
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