general description
this power mosfet is produced using truesemi‘s
advanced planar stripe dmos technology.
this advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. these devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
features
• 4.0a, 600v, rds(on) = 2.6 @vgs = 10 v
• low gate charge ( typical 16nc)
• high ruggedness
• fast switching
• 100% avalanche tested
• improved dv/dt capability
absolute maximum

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深圳市诚为通电子有限公司
周新民
13430624244
东边商务大楼