newwave激光划片机
accuscribe 2z manual led laser scribing system
355nm laser technology
fast wafer processing up to 16.0 wph
3-switchable objective alignment & viewing
automatic/manual wafer alignment & z-focusing
increased field-of-view (fov) alignment
increased depth-of-focus (dof) scribing
precision edge-detection scribe control
manual mode easy-to-use gui
yield maximizing partial wafer scribing
robust backside alignment (option)
gen-2 dynamic autofocus system (option)
multiple substrate material capability
up to 4”wafer capability
gen-3 advanced debris removal
gem/secs & data management
consistent and narrow cutting kerf width at 25 μm depth across the wafer.*
wafer throughput*
up to 16.0 wph
scribing
depth*
25 ± 2 μm (typically)
kerf width*
x-y stage
travel
110mm x 110mm
encoder resolution
0.1 μm
accuracy
bidirectional repeatability
± 0.5 μm (max)
orthogonality
8 arc-second (≤ 2.0μm over 100mm travel)
system straightness
≤ 2 μm over 100 mm travel
dynamic autofocus
dynamic range +/-100μm , accuracy ±2μm
rotational resolution
0.0003°
wafer chuck size
supports 4” wafer
system dimension specifications
chiller
width = 43.8 cm [17.25”], width = 53.3 cm [21”], height = 33.0 cm [13”]
system footprint (without chiller)
127.0 cm x 119.4 cm [47.3” x 79”]
site requirements
voltage
100-120 or 200-240 vac 50/60 hz, single phase, earth ground.
power consumption
1500w max.(
ambient temperature
20° - 25° c (68° - 77° f)
wafer vacuum
vacuum source: 24” hg, 1.1 cfm. regulate to 15”hg
vacuum for debris removal
id tube. vacuum source: 26”hg, 4.5 cfm. regulate to 2 cfm.
compressed dry clean air for debris removal
input pressure: 30 psi regulate to 10 psig & 15 scsh.

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深圳市傲内电子有限公司
史春林
13632951814
深圳市宝安区石岩镇台湾工业区三重大厦B栋2楼