1、设备名称：sts multiplex ase-hrm icp etcher
2、设备品牌：英国sts
3、设备用途：耦合离子刻蚀、深硅刻蚀
4、设备应用领域：半导体、mems、光电集成、led、薄膜电池
5、设备英文介绍：
sts multiplex ase-hrm icp etcher consisting of:
configuration:
- model: multiplex icp
- process chamber: ase-hrm
- ase-hrm chamber: high rate magnetic source achieves over three times the etch rates versus the original bosch process
- process: deep silicon etch
- bosch license
- operating sofware: windows 2000 professional
- currently set to process: 150mm
- max wafer size capable: 200mm
- year of manufacture: october 2002
- serial number: 41543
vacuum load-lock for single chamber multiplex systems (mesc):
- macs loader (cassette to cassette loader)
- carousel load lock (150mm)
- chamber lid temperature control
- fully automatic transfer of substrates between the load-lock and the process chamber
- loader may be configured for substrates up to 200mm in diameter (currently set for 150mm)
multiplex icp process chamber:
- production proven single wafer process chamber (aluminium)
- balun coil for high rate etch
- turbo pump
- vat pendulum vent valve
- backside helium cooling (hbc2 module)
- electro-static chuck (esc)
- 13.5 id ceramic chamber
- two chamber view ports
- remote sealed extracted gas box with orbitally welded gas lines
- electronics cabinet
- pentium based process module control computer
- lcd flat panel monitor
- fully automatic multistep processing or manual operation
- advanced energy lf-5 rf generator (500w)
- eni acg-3b rf power supply (13.56 mhz)
- advanced energy 3001 3kw rf power supply (coil)
- tti tgp110 10mhz pusle generator
- delta electromagnetic power supply
- milipore fc-2901 mfcs
gas box with gas configuration as follows:
- ar - 50 sccm
- o2 - 100 sccm
- c4f8 - 600 sccm
- sf6 - 400 sccm
- n2 - vent
- edwards iqdp80 dry pump
- edwards ih600 dry pump
- affinity pwg-060k chiller
- affinity raa-005t chiller
- system cables (full set)
- system power: 208v, 60hz, 3ph
- operations manuals, electrical drawings and documentation (complete manual set)
- refurbished to meet original sts specifications by ex-sts factory trained technicians
6、设备中文介绍：
窗体顶端
型号规格：icp ase 生产制造厂商：英国sts公司
适用于4英寸硅片；
标准 icp 深硅刻蚀工艺参数 :
20 微米深硅刻蚀
约 2.5 微米刻蚀窗口宽度
厚度大于 1 微米光刻胶掩膜或大约 0.5 微米 sio2 掩膜
掩膜图形的硅暴露面积小于10%
刻蚀速度：>2 微米/分钟
光刻胶的选择比：>50:1
sio2 的选择比：>100:1
边壁角度：90± 1 度
边壁粗糙度 (scallops)：
掩膜开始底部切口：每边小于 0.4 微米
均匀性 (芯片上)： ±5%
均匀性 (芯片与芯片之间)：±5%
气体sf6 ，c4f8 ，ar ，o2。
400 微米深硅刻蚀
大于80微米刻蚀窗口宽度
厚度大于10微米光刻胶掩膜或大于3.5微米sio2掩膜
掩膜图形的硅暴露面积小于10%
刻蚀速度：>2微米/分钟
光刻胶的选择比：> 50:1
sio2 的选择比：>100:1
边壁角度： 92+/-2 deg.
边壁粗糙度（scallops）：
掩膜开始底部切口： 每边小于 1.5 微米
均匀性 (芯片上) : ±5%
均匀性 (芯片与芯片之间) : ±5%
深圳市昊光机电科技应用有限公司
王明
13631617125
：深圳市龙岗区坪地镇高桥产业区麻沙旭达工业区1栋