| 类型存储器 | 存储容量512MB |
| 针脚数64 | 用途军工 |
| 品牌Cypress | 型号S29GL512P10FFIR10 |
| 封装BGA-64 | 功率NA |
| 特色服务NA | 批号18+ |
cypress存储器闪存s29gl512p10ffir10
制造商编号：
s29gl512p10ffir10
制造商：
cypress semiconductor
说明：
nor闪存 512mb 3v 100ns parallel nor闪存
规格
制造商: cypress semiconductor
产品种类: nor闪存
封装 / 箱体: bga-64
系列: s29gl512p10ffir10
存储容量: 512 mbit
接口类型: parallel
组织: 64 m x 8
定时类型: asynchronous
数据总线宽度: 8 bit
电源电压-***小: 2.7 v
电源电压-: 3.6 v
电源电流—值: 110 ma
***小工作温度: - 40 c
工作温度: + 85 c
存储类型: nor
速度: 100 ns
结构: sector
商标: cypress semiconductor
湿度敏感性: yes
产品类型: nor flash
工厂包装数量: 180
子类别: memory & data storage
单位重量: 170.200 mg
s29gl512p10ffir10
general description
the cypress s29gl01g/512/256/128p are mirrorbit? flash products fabricated on 90 nm process technology. these devices
offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. they feature a write buffer that
allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than
standard programming algorithms. this makes these devices ideal for today’s embedded applications that require higher density,
better performance and lower power consumptions29gl512p10ffir10.
distinctive characteristics
? single 3v read/program/erase (2.7-3.6 v)
? enhanced versatilei/o? control
– all input levels (address, control, and dq input levels) and
outputs are determined by voltage on vio input. vio range is 1.65
to vcc
? 90 nm mirrorbit process technology
? 8-word/16-byte page read buffer
? 32-word/64-byte write buffer reduces overall programming time for
multiple-word updates
? secured silicon sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random electronic serial number
– can be programmed and locked at the factory or by the
customer
? uniform 64 kword/128 kbyte sector architecture
– s29gl01gp: one thousand twenty-four sectors
– s29gl512p: five hundred twelve sectors
– s29gl256p: two hundred fifty-six sectors
– s29gl128p: one hundred twenty-eight sectors
? 100,000 erase cycles per sector typical
? 20-year data retention typical
? offered packages
– 56-pin tsop
– 64-ball fortified bga
? suspend and resume commands for program and erase
operations
? write operation status bits indicate program and erase operation
completion
? unlock bypass program command to reduce programming time
? support for cfi (common flash interface)
? persistent and password methods of advanced sector protection
? wp#/acc input
– accelerates programming time (when vhh is applied) for greater
throughput during system production
– protects first or last sector regardless of sector protection
settings
? hardware reset input (reset#) resets device
? ready/busy# output (ry/by#) detects program or erase cycle
completion
深圳市水星电子有限公司
李先生
13632880560
广东 深圳 福田区 振兴路109号华康大厦2栋315